CVD Coating – VET

High quality tantalum carbide TaC coating manufacturer

vtadmin — Thu, 27 Feb 2025 07:12:47 +0000

High-quality tantalum carbide (TaC) coating is made from high-purity TaC material, ensuring exceptional purity and quality. With excellent chemical and thermal stability, high-purity TaC maintains its performance even under extreme conditions.

TaC coating, made using physical vapor deposition technology, offers:

High hardness (2500-3000HV), making it an excellent hard coating.
Superior wear resistance, reducing mechanical part wear and damage.
Outstanding high-temperature performance.
Excellent chemical stability, resisting reactions with acids and alkalis.

碳化钽涂层物理特性物理特性 TaC涂层的物理性能
密度 / Density	14.3 (克/立方厘米)
比辐射率 / Specific emissivity	0.3
热膨胀系数/ Thermal expansion coefficient	6.3 10 ^-6 /K
努氏硬度 / Hardness (HK)	2000年香港
电阻 / Resistance	1× ^10⁻⁵ 欧姆·厘米
热稳定性/ Thermal stability	<2500℃
石墨尺寸变化/ Graphite size changes	-10~-20微米
涂层厚度 / Coating thickness	≥20μm 典型值（35μm±10μm）

Ningbo VET Energy Technology Co., Ltd. is a high-tech enterprise specializing in the production and sales of advanced materials, including graphite, silicon carbide, ceramics, and surface treatment technologies. Our products are widely used in industries such as photovoltaics, semiconductors, new energy, and metallurgy.
Our technical team, composed of experts from top domestic research institutions, can provide you with professional material solutions.
We warmly welcome you to visit our factory for guidance and further discussions!

TaC Coated Graphite Upper Halfmoon Manufacturer

vtadmin — Thu, 27 Feb 2025 07:09:53 +0000

The TaC Coating graphite crescent-shaped component is designed for high-temperature and specialized applications. It features a graphite substrate with a TaC coating, offering excellent thermal conductivity, corrosion resistance, and high-temperature stability. The TaC coating, prepared via physical vapor deposition, provides high hardness (2500-3000HV), superior wear resistance, exceptional high-temperature performance, and strong chemical stability against acids and alkalis.

碳化钽涂层物理特性物理特性 TaC涂层的物理性能
密度 / Density	14.3 (克/立方厘米)
比辐射率 / Specific emissivity	0.3
热膨胀系数/ Thermal expansion coefficient	6.3 10 ^-6 /K
努氏硬度 / Hardness (HK)	2000年香港
电阻 / Resistance	1× ^10⁻⁵ 欧姆·厘米
热稳定性/ Thermal stability	<2500℃
石墨尺寸变化/ Graphite size changes	-10~-20微米
涂层厚度 / Coating thickness	≥20μm 典型值（35μm±10μm）

Our technical team, composed of experts from top domestic research institutions, can provide you with professional material solutions.

We warmly welcome you to visit our factory for guidance and further discussions.

Half-moon part with Tantalum Carbide coating

vtadmin — Thu, 27 Feb 2025 06:51:24 +0000

TaC coating, made using physical vapor deposition technology, offers:

High hardness (2500-3000HV), making it an excellent hard coating.
Superior wear resistance, reducing mechanical part wear and damage.
Outstanding high-temperature performance.
Excellent chemical stability, resisting reactions with acids and alkalis.

碳化钽涂层物理特性物理特性 TaC涂层的物理性能
密度 / Density	14.3 (克/立方厘米)
比辐射率 / Specific emissivity	0.3
热膨胀系数/ Thermal expansion coefficient	6.3 10 ^-6 /K
努氏硬度 / Hardness (HK)	2000年香港
电阻 / Resistance	1× ^10⁻⁵ 欧姆·厘米
热稳定性/ Thermal stability	<2500℃
石墨尺寸变化/ Graphite size changes	-10~-20微米
涂层厚度 / Coating thickness	≥20μm 典型值（35μm±10μm）

Ningbo VET Energy Technology Co., Ltd. is a high-tech enterprise specializing in the production and sales of advanced materials, including graphite, silicon carbide, ceramics, and surface treatments. Our products are widely used in industries such as photovoltaics, semiconductors, new energy, and metallurgy.
Our technical team, composed of experts from top domestic research institutions, can provide you with professional material solutions.
We warmly welcome you to visit our factory for guidance and further discussions!

Heat Resistant Glass Carbon Crucible

vtadmin — Thu, 21 Nov 2024 05:17:13 +0000

Glass carbon crucible is a kind of crucible made of special materials for high temperature experiments and applications. It has excellent high temperature resistance, good chemical stability and high purity, so it is widely used in various fields, such as metallurgy, ceramics, chemicals, semiconductors and so on.

The manufacturing process of glass carbon crucible is very complex, which needs to go through multiple processes and strict quality control. First of all, it is necessary to use high-purity raw materials, such as graphite, asphalt, etc., after high temperature treatment and chemical reaction, to make glass carbon powder. Then, the powder is formed into the shape of the crucible after forming, sintering and other processes. Finally, it is also necessary to carry out high-temperature annealing, grinding, polishing and other treatments to ensure the quality and performance of the crucible.

Peculiarity:
Various graphite materials can be used as substrates
The properties of the graphite substrate are not lost
It can reduce the formation of graphite dust
Has better scratch resistance and other anti-friction durability

Apply:
Monocrystalline silicon drawing equipment components
Epitaxial growing parts
Continuous casting die
Glass seal fixture

Material	Bulk density	Hardness	Electrical resistivity	Bending strength	Compressive strength
ISEM-3	0	0	0	0	0
GP1B	0	+3%	0	+8%	+3%
GP2Z	0	+3%	–	+7%	+4%
GP2B	0	+3%	0	+13%	+3%

Tantalum Carbide Coating Wafer Susceptor

vtadmin — Thu, 21 Nov 2024 03:42:17 +0000

Vet-China produces Tantalum Carbide Coated Wafer Susceptor, which uses cutting-edge CVD coating technology and can perform well under extreme working conditions. Its Tantalum Carbide material combines wear resistance and corrosion resistance, making it an ideal choice for the semiconductor manufacturing industry.

In high temperature and corrosive environments, Tantalum Carbide Coated Wafer Susceptor exhibits excellent chemical inertness and thermal stability, and can effectively resist the erosion of various chemical media, ensuring long-term use under harsh conditions. This feature makes our guide rings have great application potential in semiconductor processing, chemical applications and other fields.

Choosing Vet-China’s Tantalum Carbide Coated Wafer Susceptor can not only improve your production efficiency, but also extend the service life of the equipment. Our products are strictly quality controlled to ensure that each one meets the highest industry standards to meet the different needs of customers.

Through continuous technological innovation, Vet-China is committed to providing customers with reliable solutions and promoting industry progress. Our Tantalum Carbide Coating Wafer Susceptor is your trusted choice for high temperature and corrosive environments, helping your applications reach new heights.

TaC coating is a kind of tantalum carbide (TaC) coating prepared by physical vapor deposition technology, it has the following characteristics:

1. High hardness: TaC coating hardness is high, usually can reach 2500-3000HV, is an excellent hard coating.

2. Wear resistance: TaC coating is very wear-resistant, which can effectively reduce the wear and damage of mechanical parts during use.

3. Good high temperature resistance: TaC coating can also maintain its excellent performance under high temperature environment.

4. Good chemical stability: TaC coating has good chemical stability and can resist many chemical reactions, such as acids and bases.

碳化钽涂层物理特性物理特性 Physical properties of TaC coating
密度 / Density	14.3 (g/cm³)
比辐射率 / Specific emissivity	0.3
热膨胀系数 / Thermal expansion coefficient	6.3 10^-6/K
努氏硬度 / Hardness (HK)	2000 HK
电阻 / Resistance	1×10^-5 Ohm*cm
热稳定性 / Thermal stability	<2500℃
石墨尺寸变化 / Graphite size changes	-10~-20um
涂层厚度 / Coating thickness	≥20um typical value (35um±10um)

Ningbo VET Energy Technology Co., Ltd is a high-tech enterprise focusing on the production and sales of high-end advanced materials, the materials and technology covering graphite, silicon carbide, ceramics, surface treatment and so on. The products are widely used in photovoltaic, semiconductor, new energy, metallurgy,etc..

Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

Warmly welcome you to visit our factory, let’s have further discussion!

High Purity CVD Solid SiC Bulk

vtadmin — Thu, 21 Nov 2024 03:12:19 +0000

VET Energy uses ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) as the source material for growing SiC crystals by physical vapor transport (PVT). In PVT, the source material is loaded into a crucible and sublimated onto a seed crystal.

A high purity source is required to manufacture high quality SiC crystals.

VET Energy specializes in providing large-particle SiC for PVT because it has a higher density than small-particle material formed by spontaneous combustion of Si and C-containing gases. Unlike solid-phase sintering or the reaction of Si and C, it does not require a dedicated sintering furnace or a time-consuming sintering step in a growth furnace. This large-particle material has a nearly constant evaporation rate, which improves run-to-run uniformity.

Introduction:
1. Prepare CVD-SiC block source: First, you need to prepare a high-quality CVD-SiC block source, which is usually of high purity and high density. This can be prepared by chemical vapor deposition (CVD) method under appropriate reaction conditions.

2. Substrate preparation: Select an appropriate substrate as the substrate for SiC single crystal growth. Commonly used substrate materials include silicon carbide, silicon nitride, etc., which have a good match with the growing SiC single crystal.

3. Heating and sublimation: Place the CVD-SiC block source and substrate in a high-temperature furnace and provide appropriate sublimation conditions. Sublimation means that at high temperature, the block source directly changes from solid to vapor state, and then re-condenses on the substrate surface to form a single crystal.

4. Temperature control: During the sublimation process, the temperature gradient and temperature distribution need to be precisely controlled to promote the sublimation of the block source and the growth of single crystals. Appropriate temperature control can achieve ideal crystal quality and growth rate.

5. Atmosphere control: During the sublimation process, the reaction atmosphere also needs to be controlled. High-purity inert gas (such as argon) is usually used as a carrier gas to maintain appropriate pressure and purity and prevent contamination by impurities.

6. Single crystal growth: The CVD-SiC block source undergoes a vapor phase transition during the sublimation process and recondenses on the substrate surface to form a single crystal structure. Rapid growth of SiC single crystals can be achieved through appropriate sublimation conditions and temperature gradient control.

Warmly welcome you to visit our factory, let’s have further discussion!

SiC Coating Carrier For RTP/RTA

vtadmin — Thu, 21 Nov 2024 03:05:29 +0000

SiC Coating Carrier For RTP/RTA is a key component used in the semiconductor manufacturing processes called Rapid Thermal Processing & Annealing, we use our patented technology to make the silicon carbide carrier with extremely high purity, good coating uniformity and an excellent service life, as well as high chemical resistance and thermal stability properties.

Features of our products:

1. High temperature oxidation resistance up to 1700℃.
2. High purity and thermal uniformity
3. Excellent corrosion resistance: acid, alkali, salt and organic reagents.
4. High hardness, compact surface, fine particles.
5. Longer service life and more durable

CVD SiC薄膜基本物理性能 Basic physical properties of CVD SiC coating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Flexural Strength	415 MPa RT 4-point
杨氏模量 / Young’ s Modulus	430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

VET Energy is the real manufacturer of customized graphite and silicon carbide products with different coatings like SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, etc., can supply various customized parts for semiconductor and photovoltaic industry.

Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

We continuously develop advanced processes to provide more advanced materials, and have worked out an exclusive patented technology, which can make the bonding between the coating and the substrate tighter and less prone to detachment.

Warmly welcome you to visit our factory, let’s have further discussion!

China Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor

vtadmin — Thu, 21 Nov 2024 02:43:26 +0000

High quality MOCVD Susceptor Buy online in China

A wafer needs to pass through several steps before it is ready for use in electronic devices. One important process is silicon epitaxy, in which the wafers are carried on graphite susceptors. The properties and quality of the susceptors have a crucial effect on the quality of the wafer’s epitaxial layer.

For thin film deposition phases such as epitaxy or MOCVD, VET supplies ultra-pure graphiteequipment used to support substrates or “wafers”. At the core of the process, this equipment, epitaxy susceptors or satellite platforms for the MOCVD, are first subjected to the deposition environment:

High temperature.
High vacuum.
Use of aggressive gaseous precursors.
Zero contamination, absence of peeling.
Resistance to strong acids during cleaning operations

VET Energy is the real manufacturer of customized graphite and silicon carbide products with coating for semiconductor and photovoltaic industry. Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

Features of our products:

CVD SiC薄膜基本物理性能 Basic physical properties of CVD SiC coating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Flexural Strength	415 MPa RT 4-point
杨氏模量 / Young’ s Modulus	430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

Warmly welcome you to visit our factory, let’s have further discussion!

SiC Coated Graphite Base Carriers

vtadmin — Thu, 21 Nov 2024 02:28:28 +0000

SiC coated graphite carrier is a key component used in various semiconductor manufacturing processes. We use our patented technology to make the silicon carbide carrier with extremely high purity, good coating uniformity and an excellent service life, as well as high chemical resistance and thermal stability properties.

Features of our products:

CVD SiC薄膜基本物理性能 Basic physical properties of CVD SiC coating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Flexural Strength	415 MPa RT 4-point
杨氏模量 / Young’ s Modulus	430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

Warmly welcome you to visit our factory, let’s have further discussion!

Epitaxial Epi Graphite Barrel Susceptor

vtadmin — Thu, 21 Nov 2024 02:16:56 +0000

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor is a specially designed support and heating device used to hold and heat semiconductor substrates during manufacturing processes like Deposition or Epitaxy processes.

Its structure includes typically cylindrical or slightly barrel-shaped, surface features multiple pockets or platforms for placing the wafers, can be solid or hollow design, depending on the heating method.

The main functions of epitaxial barrel susceptor:

-Substrate support: securely holds multiple semiconductor wafers;
-Heat source: provides high temperatures required for growth through heating;
-Temperature uniformity: ensures uniform heating of substrates;
-Rotation: usually rotates during growth to improve temperature and gas distribution uniformity.

Working principle of Epi graphite barrel susceptor:
– In the epitaxial reactor, the barrel susceptor is heated to the required temperature (typically 1000℃-1200℃ for silicon epitaxy);
-The barrel susceptor rotates to ensure uniform temperature distribution and gas flow;
-Reaction gases decompose at high temperatures, forming epitaxial layers on the substrate surface.

Applications:
-Primarily used for silicon epitaxial growth
-Also applicable for epitaxy of other semiconductor materials like GaAs, InP, etc.

VET Energy use high purity graphite with CVD-SiC coating to enhance the chemical stability:

The advantages of VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-High temperature stability;
-Good thermal uniformity;
-Can process multiple substrates simultaneously, improving production efficiency;
-Chemically inert, maintaining a high-purity growth environment.

Ningbo VET Energy Technology Co., Ltd is a high-tech enterprise focusing on the production and sales of high-end advanced materials, the materials and technology including graphite, silicon carbide, ceramics, surface treatment like SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, etc., these products are widely used in photovoltaic, semiconductor, new energy, metallurgy,etc..

Our technical team comes from top domestic research institutions, and have developed multiple patented technologies to ensure product performance and quality, can also provide customers with professional material solutions.

We warmly welcome you to visit our laboratory and plant for technical discussion and cooperations!