Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor is a specially designed support and heating device used to hold and heat semiconductor substrates during manufacturing processes like Deposition or Epitaxy processes.

Its structure includes typically cylindrical or slightly barrel-shaped, surface features multiple pockets or platforms for placing the wafers, can be solid or hollow design, depending on the heating method.

The main functions of epitaxial barrel susceptor:

-Substrate support: securely holds multiple semiconductor wafers;
-Heat source: provides high temperatures required for growth through heating;
-Temperature uniformity: ensures uniform heating of substrates;
-Rotation: usually rotates during growth to improve temperature and gas distribution uniformity.

Working principle of Epi graphite barrel susceptor:
– In the epitaxial reactor, the barrel susceptor is heated to the required temperature (typically 1000℃-1200℃ for silicon epitaxy);
-The barrel susceptor rotates to ensure uniform temperature distribution and gas flow;
-Reaction gases decompose at high temperatures, forming epitaxial layers on the substrate surface.

Applications:
-Primarily used for silicon epitaxial growth
-Also applicable for epitaxy of other semiconductor materials like GaAs, InP, etc.

VET Energy use high purity graphite with CVD-SiC coating to enhance the chemical stability:

The advantages of VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-High temperature stability;
-Good thermal uniformity;
-Can process multiple substrates simultaneously, improving production efficiency;
-Chemically inert, maintaining a high-purity growth environment.