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The Effect of Different Temperatures on the Growth of CVD SiC Coating

This article analyzes the quality of thin films grown at various process temperatures during CVD SiC coating preparation to determine the optimal temperature. Using graphite as the substrate and trichloromethylsilane (MTS) as the reaction gas, the low-pressure CVD process deposits the SiC coating, with its micromorphology observed via scanning electron microscopy to assess structural density.

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