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VET is a tailor-made expert for advanced carbon-based product

Epi Graphite Barrel Susceptor

VET Energy focuses on the research and production of high-purity graphite barrel susceptor, through independent CVD coating technology, the susceptor combines the high thermal conductivity of graphite with the oxidation resistance of SiC, and can operate stably at high temperatures of 1600 ℃, with a lifespan increase of more than three times.

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SiC Crystal Growth Raw Material

High-purity CVD SiC raw material, prepared via CVD, is ideal for silicon carbide crystal growth through physical vapor transport. Supplied by VET Energy, it boasts higher density than small particles formed by spontaneous combustion of Si and C-containing gases. It requires no dedicated sintering furnace, offers a stable evaporation rate, and enables the growth of high-quality SiC single crystals. We look forward to your inquiry!

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Contiguous Wafer Boat

Continuous wafer boats are advanced semiconductor processing equipment. Their carefully designed structure ensures efficient processing and production of precision wafers. VET China offers customized product solutions and welcomes your inquiries.

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Core Applications of TAC Coating in Semiconductor Manufacturing

Tantalum carbide-coated components are primarily used in semiconductor chip manufacturing for wafer processing, oxidation diffusion, epitaxy, and etching. They are also applied in graphite accessories for silicon carbide crystal growth furnaces. Domestic technology leads globally, though there is still a gap compared to foreign advancements. However, the large market share in the Asia-Pacific region offers significant growth potential for tantalum carbide coating applications.

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The Effect of Different Temperatures on the Growth of CVD SiC Coating

This article analyzes the quality of thin films grown at various process temperatures during CVD SiC coating preparation to determine the optimal temperature. Using graphite as the substrate and trichloromethylsilane (MTS) as the reaction gas, the low-pressure CVD process deposits the SiC coating, with its micromorphology observed via scanning electron microscopy to assess structural density.

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