Navigating the 200mm Transition: Why TaC Coating is the Deciding Factor for 8-inch SiC Yields
Introduction As the global power electronics industry aggressively shifts from 150mm (6-inch) to 200mm (8-inch) SiC wafer production, the conversation often stays on the reactors themselves. However, at the heart of the MOCVD and Epitaxy process lies a silent but critical component: the graphite susceptor. If you are seeing a drop in yield or unexpected crystal defects as you scale to 8-inch, you aren’t alone. The thermal and chemical stresses at 1600°C+ are pushing traditional coatings to their breaking point.
