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High-purity CVD SiC raw material, prepared via CVD, is ideal for silicon carbide crystal growth through physical vapor transport. Supplied by VET Energy, it boasts higher density than small particles formed by spontaneous combustion of Si and C-containing gases. It requires no dedicated sintering furnace, offers a stable evaporation rate, and enables the growth of high-quality SiC single crystals. We look forward to your inquiry!

Continuous wafer boats are advanced semiconductor processing equipment. Their carefully designed structure ensures efficient processing and production of precision wafers. VET China offers customized product solutions and welcomes your inquiries.

This article analyzes the quality of thin films grown at various process temperatures during CVD SiC coating preparation to determine the optimal temperature. Using graphite as the substrate and trichloromethylsilane (MTS) as the reaction gas, the low-pressure CVD process deposits the SiC coating, with its micromorphology observed via scanning electron microscopy to assess structural density.