SiC Crystal Growth Raw Material

VET ENERGY has developed a new high-purity CVD SiC single crystal raw material, filling a domestic gap and achieving a globally leading position. Unlike traditional silicon carbide, which is costly, low in purity, and limited in size, this innovation ensures superior quality and long-term competitiveness.

VET ENERGY’s fluidized bed technology utilizes methyltrichlorosilane for producing high-purity silicon carbide (SiC) raw materials via chemical vapor deposition, with hydrochloric acid as the main by-product. The by-product can be neutralized with alkali to prevent environmental pollution. As a widely available and cost-effective industrial gas, methyltrichlorosilane is primarily produced in China, giving VeTek Semiconductor’s high-purity CVD SiC raw materials (purity >99.9995%) a globally competitive edge in both cost and quality.

Advantages of High purity CVD SiC raw material

● Large size and high density

The average particle size is about 4-10mm, and the particle size of domestic Acheson raw materials is <2.5mm. The same volume crucible can hold more than 1.5kg of raw materials, which is conducive to solving the problem of insufficient supply of large-size crystal growth materials, alleviating the graphitization of raw materials, reducing carbon wrapping and improving crystal quality.

 ● Low Si/C ratio

It is closer to 1:1 than the Acheson raw materials of the self-propagating method, which can reduce the defects induced by the increase of Si partial pressure.

 ● High output value

The grown raw materials still maintain the prototype, reduce recrystallization, reduce the graphitization of raw materials, reduce carbon wrapping defects, and improve the quality of crystals.

● Higher purity

The purity of raw materials produced by the CVD method is higher than that of the Acheson raw materials of the self-propagating method. The nitrogen content has reached 0.09ppm without additional purification. This raw material can also play an important role in the semi-insulating field.

● Lower cost

The uniform evaporation rate facilitates process and product quality control, while improving the utilization rate of raw materials (utilization rate>50%, 4.5kg raw materials produce 3.5kg ingots), reducing costs.

 ● Low human error rate

Chemical vapor deposition avoids impurities introduced by

High-purity CVD SiC raw material is an advanced product designed to replace SiC powder for growing SiC single crystals. It ensures exceptional crystal quality. Currently, VeTek Semiconductor has mastered this technology and can supply the product to the market at a highly competitive price.