Contiguous Wafer Boat

VET enregy offer Contiguous Wafer Boat base on semiconductor SIC and ceramic material. The special continuous structure design of the wafer boat ensures each wafer is tightly connected without gaps, maximizing space utilization and improving production efficiency. Precisely designed positioning holes ensure perfect alignment with fixtures during processing, enhancing accuracy and yield. Made of smooth, inert materials, the wafer boat prevents contamination, absorbs vibrations, and protects wafers during transport.

连续晶圆舟-3

 

Our State-Of-The-Art Manufacturing Facilities Offer:
• Ultra-high-purity recrystallized and CVD silicon carbides
• Advanced forming and casting technologies
• Extreme-precision CNC machining
• High-temperature firing capabilities
• Plasma coating technologies
• Advanced cleaning processes

 

Basic physical properties of Horizontal SiC Wafer Carrier:

 

 

Advanced Material Research & Development
VET energy continues to make signficant investments in research and development to develop next-generation materials for the critical challenges faced by semiconductor and solar manufacturing industries. 

 

As a leading manufacturer and supplier of advanced coating materials in China’s semiconductor industry, VeT energy is committed to providing customers with various customized advanced technology and product solutions.We sincerely hope to become your long-term partner in China.

VeTek Semiconductor Wafer Boat shops

 

半导体芯片外延产业链概述

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Altri post

Core Applications of TAC Coating in Semiconductor Manufacturing

Tantalum carbide-coated components are primarily used in semiconductor chip manufacturing for wafer processing, oxidation diffusion, epitaxy, and etching. They are also applied in graphite accessories for silicon carbide crystal growth furnaces. Domestic technology leads globally, though there is still a gap compared to foreign advancements. However, the large market share in the Asia-Pacific region offers significant growth potential for tantalum carbide coating applications.

The Effect of Different Temperatures on the Growth of CVD SiC Coating

This article analyzes the quality of thin films grown at various process temperatures during CVD SiC coating preparation to determine the optimal temperature. Using graphite as the substrate and trichloromethylsilane (MTS) as the reaction gas, the low-pressure CVD process deposits the SiC coating, with its micromorphology observed via scanning electron microscopy to assess structural density.

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